Single crystalline β-Ga{sub 2}O{sub 3} nanowires synthesized by thermal oxidation of GaSe layer
- Department of Material Science, University of Salento I, 73100 Lecce (Italy)
Highlights: ► β-Ga{sub 2}O{sub 3} nanowires were synthesized through annealing GaSe crystal. ► Nanowires obtained at different annealing temperatures were characterized. ► A possible growth mechanism was proposed. - Abstract: β-Ga{sub 2}O{sub 3} nanowires were grown by thermal oxidation of GaSe single crystal surface under a mixture of argon–air flow, without the presence of a catalyst or foreign substrate. The nanowires were obtained after annealing GaSe surface at different temperatures (720 °C, 850 °C and 930 °C) for 5 h and they were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and selected area diffraction pattern. The lengths of the nanowires varied in the range 50–180 nm, while the typical diameters of the nanowires were in the range 60–90 nm. A possible mechanism has been proposed in order to explain the growth of oxide nanowires.
- OSTI ID:
- 22290414
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 5; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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