Synthesis, electrical and dielectric characterization of cerium doped nano copper ferrites
Graphical abstract: Lattice constant (a) and activation energy (Ea) as a function of Ce (cerium) content. - Highlights: • The simple and economic method has been adopted for the synthesis of nanoferrites. • The electrical resistivity increases with cerium concentration. • DC electrical resistivity of these materials favours their use in microwave devices. • Dielectric measurements show semiconductor nature of the synthesized ferrites. - Abstract: The nanosized CuFe{sub 2−x}Ce{sub x}O{sub 4} (x = 0.0, 0.2, 0.4, 0.6, 0.8) ferrites doped with cerium are synthesized by chemical co-precipitation method. The synthesized materials are characterized by XRD, FTIR, TGA and SEM. XRD analysis of cerium substituted copper ferrites confirms the cubic spinel structure. The average crystallite size calculated by using Scherrer's formula ranges from 37 to 53 nm. The values of cell constant and cell volume vary with the dopant concentration. These variations can be explained in terms of their ionic radii. The DC electrical resistivity, measured by two point probe method, increases with increase in dopant concentration while it decreases with rise in temperature exhibiting semiconductor behaviour. Energy of activation of these ferrites is calculated by using Arrhenius type resistivity plots. Dielectric measurements of the synthesized compounds show exponential decrease in dielectric constant and dielectric loss factor with increase in frequency. This indicates the normal dielectric behaviour of ferrites.
- OSTI ID:
- 22285211
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 11; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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