Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice
A long wavelength infrared minority electron unipolar photodetector based on InAs/GaSb type-II superlattices is demonstrated. At 77 K, a dark current of 3 × 10{sup −5} A/cm{sup 2} and a differential resistance-area of 3700 Ω.cm{sup 2} are achieved at the turn-on bias, with a 50%-cutoff of 10.0 μm and a specific detectivity of 6.2 × 10{sup 11} Jones. The dark current is fitted as a function of bias and temperature using a model combining generation-recombination and trap-assisted tunneling. Good agreement was observed between the theory and the experimental dark current.
- OSTI ID:
- 22283239
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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