InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Journal Article · Mon Feb 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864159· OSTI ID:22283238

Keizer, J. G.; Koenraad, P. M. ^[1]; Ulloa, J. M.; Utrilla, A. D. ^[2]

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1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)
2. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

• OSTI ID: 22283238
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANTIMONIDES
COMPARATIVE EVALUATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MORPHOLOGY
NITRIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
STRAINS
THIN FILMS