Hysteretic electrical transport in BaTiO{sub 3}/Ba{sub 1−x}Sr{sub x}TiO{sub 3}/Ge heterostructures

Journal Article · Mon Feb 10 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864648· OSTI ID:22283156

Ngai, J. H.; Kumah, D. P.; Walker, F. J. ^[1]; Ahn, C. H. ^[1]

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1. Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, 15 Prospect Street, New Haven, Connecticut 06520-8284 (United States)

We present electrical transport measurements of heterostructures comprised of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} epitaxially grown on Ge. Sr alloying imparts compressive strain to the BaTiO{sub 3}, which enables the thermal expansion mismatch between BaTiO{sub 3} and Ge to be overcome to achieve c-axis oriented growth. The conduction bands of BaTiO{sub 3} and Ba{sub 1−x}Sr{sub x}TiO{sub 3} are nearly aligned with the conduction band of Ge, which facilitates electron transport. Electrical transport measurements through the dielectric stack exhibit rectifying behavior and hysteresis, where the latter is consistent with ferroelectric switching.

• OSTI ID: 22283156
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ELECTRONS
EPITAXY
FERROELECTRIC MATERIALS
GERMANIUM
HETEROJUNCTIONS
HYSTERESIS
STRAINS
STRONTIUM COMPOUNDS
THERMAL EXPANSION
TITANATES