Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer
We present a quasi-planar technological approach for forming a flexible and versatile confinement scheme based on oxidation of AlGaAs buried layers combined to an epitaxial regrowth. This method improves the electrical and optical confinements compared to the lateral oxidation since it allows to define confinement areas from a planar surface. This technique is suitable for the realization of advanced integrated photonic components arrays with close device-to-device spacing such as two-dimensional arrays of vertical-cavity surface-emitting lasers. Our results prove that the oxidation and epitaxial regrowth can be sequenced in a process flow, leading to viable confinement while preserving good radiative properties.
- OSTI ID:
- 22283148
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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