Resistive switching memories in MoS{sub 2} nanosphere assemblies

Journal Article · Mon Jan 20 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862755· OSTI ID:22280718

Xu, Xiao-Yong ^[1]; Yin, Zong-You ^[2]; Xu, Chun-Xiang; Dai, Jun ^[3]; Hu, Jing-Guo ^[1]

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1. School of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)
2. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)
3. State Key Laboratory of Bioelectronics and School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS{sub 2} nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼10{sup 4}), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.

• OSTI ID: 22280718
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRONS
GRAPHENE
INDIUM COMPOUNDS
MEMORY DEVICES
MOLYBDENUM SULFIDES
NANOSTRUCTURES
TIN OXIDES
TUNNEL EFFECT