Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding

Journal Article · Sun Jan 19 23:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862795· OSTI ID:22280599

Mu, Jianwei; Kimerling, Lionel C.; Michel, Jurgen ^[1]; Soref, Richard ^[2]

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1. Microphotonics Center and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
2. Department of Physics and the Engineering Program, University of Massachusetts at Boston, Boston, Massachusetts 02125 (United States)

Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ{sup 2} cross-section. Because the ∼50-nm SON (Si{sub 3}N{sub 4}) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode.

• OSTI ID: 22280599
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
DOPED MATERIALS
ELECTRONIC STRUCTURE
ENERGY GAP
LAYERS
MODULATION
OXIDES
PLASMONS
SEMICONDUCTOR MATERIALS
SILICON
SILICON NITRIDES
SILVER
WAVEGUIDES