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Title: Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding

Abstract

Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ{sup 2} cross-section. Because the ∼50-nm SON (Si{sub 3}N{sub 4}) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode.

Authors:
; ;  [1];  [2]
  1. Microphotonics Center and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  2. Department of Physics and the Engineering Program, University of Massachusetts at Boston, Boston, Massachusetts 02125 (United States)
Publication Date:
OSTI Identifier:
22280599
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; LAYERS; MODULATION; OXIDES; PLASMONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; SILVER; WAVEGUIDES

Citation Formats

Mu, Jianwei, E-mail: mujw@mit.edu, E-mail: soref@rcn.com, Kimerling, Lionel C., Michel, Jurgen, and Soref, Richard, E-mail: mujw@mit.edu, E-mail: soref@rcn.com. Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding. United States: N. p., 2014. Web. doi:10.1063/1.4862795.
Mu, Jianwei, E-mail: mujw@mit.edu, E-mail: soref@rcn.com, Kimerling, Lionel C., Michel, Jurgen, & Soref, Richard, E-mail: mujw@mit.edu, E-mail: soref@rcn.com. Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding. United States. doi:10.1063/1.4862795.
Mu, Jianwei, E-mail: mujw@mit.edu, E-mail: soref@rcn.com, Kimerling, Lionel C., Michel, Jurgen, and Soref, Richard, E-mail: mujw@mit.edu, E-mail: soref@rcn.com. 2014. "Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding". United States. doi:10.1063/1.4862795.
@article{osti_22280599,
title = {Silicon-on-nitride structures for mid-infrared gap-plasmon waveguiding},
author = {Mu, Jianwei, E-mail: mujw@mit.edu, E-mail: soref@rcn.com and Kimerling, Lionel C. and Michel, Jurgen and Soref, Richard, E-mail: mujw@mit.edu, E-mail: soref@rcn.com},
abstractNote = {Silicon-on-nitride (SON) is a convenient, low-loss platform for mid-infrared group IV plasmonics and photonics. We have designed 5-layer SON channel-waveguides and slab-waveguides for the 2.0 to 5.4 μm wavelength range and have simulated the resulting three-dimensional (3D) and two-dimensional (2D) SON gap-plasmon modes. Our simulations show propagation lengths of ∼60 μm for 3D gap-strip modes having a 0.003 λ{sup 2} cross-section. Because the ∼50-nm SON (Si{sub 3}N{sub 4}) mode region is also a gate insulator between silver (Ag) and n-doped Silicon (Si), metal-oxide-semiconductor accumulation gating is available for electro-optical loss modulation of the gap-confined mode.},
doi = {10.1063/1.4862795},
journal = {Applied Physics Letters},
number = 3,
volume = 104,
place = {United States},
year = 2014,
month = 1
}
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