Dilute antimonide nitride for long wavelength infrared photodetection

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878302· OSTI ID:22280298

Chen, X. Z.; Jin, Y. J.; Zhang, D. H. ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, 638798b (Singapore)

InSb{sub 1−x}N{sub x} materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (N{sub In}), interstitial N{sub 2}, also exist in the grown films. The ratio to the total nitrogen bonds formed in the materials varies with preparation conditions. The optical bandgap data confirmed bandgap narrowing due to the incorporation of nitrogen. Photoconductive and photovoltaic photodetectors are fabricated and the cut-off frequencies of up to 11.5 μm are demonstrated.

• OSTI ID: 22280298
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
ENERGY GAP
INDIUM ANTIMONIDES
NITROGEN
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTOVOLTAIC EFFECT
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY