Physical properties and applications of In{sub x}Ga{sub 1−x}N nanowires
Journal Article
·
· AIP Conference Proceedings
- Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia, Spain and European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble (France)
- Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)
- European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble (France)
- Georg-August-University Göttingen, IV. Physikalisches Institut, 37077 Göttingen (Germany)
We have successfully grown In{sub x}Ga{sub 1−x}N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In{sub x}Ga{sub 1−x}N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result.
- OSTI ID:
- 22280285
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1598; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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