Structural characterisation of BaTiO{sub 3} thin films deposited on SrRuO{sub 3}/YSZ buffered silicon substrates and silicon microcantilevers

Journal Article · Fri Feb 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4863542· OSTI ID:22278153

Colder, H.; Méchin, L. ^[1]; Domengès, B. ^[2]; Marie, P.; Boisserie, M. ^[3]; Guillon, S.; Nicu, L. ^[4]; Galdi, A. ^[1]

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1. GREYC, UMR 6072, CNRS, ENSICAEN, UCBN, 6 bd du Maréchal Juin, 14050 Caen Cedex (France)
2. LAMIPS, CRISMAT-NXP Semiconductors-Presto Engineering laboratory, CNRS-UMR 6508, ENSICAEN, UCBN, 2 rue de la Girafe, 14 000 Caen (France)
3. CIMAP, UMR 6252, CNRS, ENSICAEN, UCBN, CEA, 6 bd du Maréchal Juin, 14050 Caen Cedex (France)
4. LAAS, CNRS, Univ de Toulouse, 7 avenue du Colonel Roche, 31400 Toulouse (France)

We report on the progress towards an all epitaxial oxide layer technology on silicon substrates for epitaxial piezoelectric microelectromechanical systems. (101)-oriented epitaxial tetragonal BaTiO{sub 3} (BTO) thin films were deposited at two different oxygen pressures, 5.10{sup −2} mbar and 5.10{sup −3} mbar, on SrRuO{sub 3}/Yttria-stabilized zirconia (YSZ) buffered silicon substrates by pulsed laser deposition. The YSZ layer full (001) orientation allowed the further growth of a fully (110)-oriented conductive SrRuO{sub 3} electrode as shown by X-ray diffraction. The tetragonal structure of the BTO films, which is a prerequisite for the piezoelectric effect, was identified by Raman spectroscopy. In the BTO film deposited at 5.10{sup −2} mbar strain was mostly localized inside the BTO grains whereas at 5.10{sup −3} mbar, it was localized at the grain boundaries. The BTO/SRO/YSZ layers were finally deposited on Si microcantilevers at an O{sub 2} pressure of 5.10{sup −3} mbar. The strain level was low enough to evaluate the BTO Young modulus. Transmission electron microscopy (TEM) was used to investigate the epitaxial quality of the layers and their epitaxial relationship on plain silicon wafers as well as on released microcantilevers, thanks to Focused-Ion-Beam TEM lamella preparation.

• OSTI ID: 22278153
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
ENERGY BEAM DEPOSITION
EPITAXY
GRAIN BOUNDARIES
LASER RADIATION
LAYERS
PIEZOELECTRICITY
PULSED IRRADIATION
RAMAN SPECTROSCOPY
SILICON
STRAINS
STRONTIUM OXIDES
SUBSTRATES
THIN FILMS
TITANATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YOUNG MODULUS
YTTRIUM OXIDES
ZIRCONIUM OXIDES