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Title: Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Abstract

Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup −5} gm{sup −2} day{sup −1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.

Authors:
 [1];  [2];  [3]; ; ;  [1];  [1];  [2]
  1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22278049
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; DENSITY; DEPOSITION; LAYERS; LIGHT EMITTING DIODES; RADIOWAVE RADIATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WATER VAPOR; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Jung, Hyunsoo, Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741, Jeon, Heeyoung, Choi, Hagyoung, Ham, Giyul, Shin, Seokyoon, Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr, and Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition. United States: N. p., 2014. Web. doi:10.1063/1.4866001.
Jung, Hyunsoo, Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741, Jeon, Heeyoung, Choi, Hagyoung, Ham, Giyul, Shin, Seokyoon, Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr, & Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791. Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition. United States. doi:10.1063/1.4866001.
Jung, Hyunsoo, Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741, Jeon, Heeyoung, Choi, Hagyoung, Ham, Giyul, Shin, Seokyoon, Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr, and Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791. Fri . "Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition". United States. doi:10.1063/1.4866001.
@article{osti_22278049,
title = {Al{sub 2}O{sub 3} multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition},
author = {Jung, Hyunsoo and Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 and Jeon, Heeyoung and Choi, Hagyoung and Ham, Giyul and Shin, Seokyoon and Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr and Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791},
abstractNote = {Al{sub 2}O{sub 3} films deposited by remote plasma atomic layer deposition have been used for thin film encapsulation of organic light emitting diode. In this study, a multi-density layer structure consisting of two Al{sub 2}O{sub 3} layers with different densities are deposited with different deposition conditions of O{sub 2} plasma reactant time. This structure improves moisture permeation barrier characteristics, as confirmed by a water vapor transmission rate (WVTR) test. The lowest WVTR of the multi-density layer structure was 4.7 × 10{sup −5} gm{sup −2} day{sup −1}, which is one order of magnitude less than WVTR for the reference single-density Al{sub 2}O{sub 3} layer. This improvement is attributed to the location mismatch of paths for atmospheric gases, such as O{sub 2} and H{sub 2}O, in the film due to different densities in the layers. This mechanism is analyzed by high resolution transmission electron microscopy, elastic recoil detection, and angle resolved X-ray photoelectron spectroscopy. These results confirmed that the multi-density layer structure exhibits very good characteristics as an encapsulation layer via location mismatch of paths for H{sub 2}O and O{sub 2} between the two layers.},
doi = {10.1063/1.4866001},
journal = {Journal of Applied Physics},
number = 7,
volume = 115,
place = {United States},
year = {Fri Feb 21 00:00:00 EST 2014},
month = {Fri Feb 21 00:00:00 EST 2014}
}