Measurement of bandgap energies in low-k organosilicates

Journal Article · Fri Mar 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4867644· OSTI ID:22277928

Nichols, M. T.; Li, W.; Pei, D.; Shohet, J. L. ^[1]; Antonelli, G. A. ^[2]; Lin, Q. ^[3]; Banna, S. ^[4]; Nishi, Y. ^[5]

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1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Lam Research, Tualatin, Oregon 97062 (United States)
3. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
4. Applied Materials, Sunnyvale, California 94085 (United States)
5. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented.

• OSTI ID: 22277928
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY LOSSES
INTERFACES
ORGANIC COMPOUNDS
SILICATES
X-RAY PHOTOELECTRON SPECTROSCOPY