Current transport and thermoelectric properties of very high power factor Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) devices
- Department of Materials Science and Technology, University of Crete, P.O. Box 2208, Heraklion, Crete 710 03 (Greece)
- Department of Physics, University of Lisbon and ICEMS, Campo Grande Ed. C8, Lisbon 1749-016 (Portugal)
The current transport and thermoelectric properties of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures with Fe{sub 3}O{sub 4} thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200 K due to the onset of conduction along the Si/SiO{sub 2} interface related to tunneling of electrons from the Fe{sub 3}O{sub 4} into the accumulation layer of holes at the Si/SiO{sub 2} interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300 K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K{sup 2}m when the Fe{sub 3}O{sub 4} layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe{sub 3}O{sub 4} layer at 300 K, while the Fe{sub 3}O{sub 4}/SiO{sub 2}/p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.
- OSTI ID:
- 22275748
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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