Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells

Journal Article · Mon Jan 13 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862028· OSTI ID:22275693

Driscoll, Kristina; Bennett, Mitchell F.; Polly, Stephen J.; Forbes, David V.

The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (V{sub OC}). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the V{sub OC} of the emitter-shifted device was degraded, the center and base-shifted devices exhibited V{sub OC} comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement.

• OSTI ID: 22275693
• Journal Information: Applied Physics Letters, Vol. 104, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM DOTS
SOLAR CELLS