Positioning effects on quantum dot solar cells grown by molecular beam epitaxy
- Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim (Norway)
- Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim (Norway)
We report current-voltage and spectral response characteristics of high density InAs/GaAs quantum dot (QD) solar cells with different positions where dots are located. The short circuit current density (J{sub sc}), open circuit voltage (V{sub oc}), and external quantum efficiency of these cells under air mass 1.5 are presented and compared with a GaAs reference cell. An extended photoresponse in contrast to the GaAs reference cell was confirmed for all these cells. The effect of inserting QD layers into emitter and base region on device performance is shown. The J{sub sc} is reduced, while the V{sub oc} is maintained. The cell with QDs located toward the base side shows better performance, confirmed by both current-voltage and spectral response measurements.
- OSTI ID:
- 21347302
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 96; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
AIR
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CURRENT DENSITY
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
AIR
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CURRENT DENSITY
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GASES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM DOTS
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE