Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf{sub 0.6}La{sub 0.4}O{sub x} films

Journal Article · Mon Apr 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870446· OSTI ID:22273699

Jia, Tingting; Kimura, Hideo ^[1]; Zhao, Hongyang ^[2]; Yao, Qiwen; Cheng, Zhenxiang ^[3]; Cheng, Xinghong; Yu, Yuehui ^[4]

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1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi Road 1295, Shanghai 200050 (China)
3. Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500 (Australia)
4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

One of the major challenges in realizing the GaAs channel in the metal oxide semiconductor field effect transistor is the degrading in electron transport properties at the interface between GaAs and the gate oxide. In this study, Hf{sub 0.6}La{sub 0.4}O{sub x} gate oxide films were deposited at a low temperature (200 °C) on GaAs(111)A and GaAs(100) substrates by plasma enhanced atomic layer deposition. Microstructure analysis indicates that residuals of gallium oxide, arsenic oxide, and As element remained at the interface of Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(100). On contrast, a smoother interface is observed between Hf{sub 0.6}La{sub 0.4}O{sub x} thin film and GaAs(111)A substrate. Furthermore, a reduction of interfacial layer is observed in Hf{sub 0.6}La{sub 0.4}O{sub x}/GaAs(111)A. Electrical characterization of the metal-insulator-semiconductor Pt/Hf{sub 0.6}La{sub 0.4}O{sub x}/n-GaAs(111)A capacitor indicated a reduction of D{sub it} and leakage current compared with the capacitor fabricated on GaAs(100)

• OSTI ID: 22273699
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC OXIDES
CAPACITORS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM OXIDES
HAFNIUM COMPOUNDS
INTERFACES
LANTHANUM OXIDES
LAYERS
LEAKAGE CURRENT
MICROSTRUCTURE
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS