Epitaxial integration of photoresponsive Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} with Si(001)

Journal Article · Tue Mar 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3561371· OSTI ID:21538173

Yong, Grace J; Kolagani, Rajeswari M; Hofmann, Benjamin P; Adhikari, Sanjay; Smolyaninova, Vera N ^[1]; Liang, Yong ^[2]

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1. Department of Physics, Astronomy and Geosciences, Towson University, 8000 York Rd., Towson, Maryland 21252 (United States)
2. Motorola Inc., 2900 S. Diablo Way, Bldg. A Suite 150, Tempe, Arizona 85282 (United States)

Previously it has been shown that the resistivity of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} epitaxial thin films on oxide substrates decreases significantly upon illumination with visible light. The resistivity decrease is observed over a wide temperature range and is understood as arising due to the destruction of charge ordering. The light responsivity makes Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} thin films attractive for photonic and optoelectronic device applications. In this paper, we report the heteroepitaxy of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} thin films on (001) Si which is relevant for the potential integration of the optoelectronic/photonic functionality of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} with semiconductor electronics. As in the case of other perovskite oxides, heteroepitaxy of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} on Si requires the use of buffer layers to circumvent the problems associated with the presence of an amorphous native silicon dioxide layer and the reactivity of perovskite oxides with Si at high temperatures. We demonstrate that high quality epitaxial thin films of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} can be grown via pulse laser deposition on Si that has been prebuffered with a SrTiO{sub 3} layer via a Motorola molecular beam epitaxy process. The magnitude and dynamics of the photoresponse in these films is comparable to that of Bi{sub 0.4}Ca{sub 0.6}MnO{sub 3} films on oxide substrates.

• OSTI ID: 21538173
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
CALCIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY BEAM DEPOSITION
EPITAXY
EQUIPMENT
FILMS
ILLUMINANCE
IRRADIATION
LASER RADIATION
LAYERS
MANGANATES
MANGANESE COMPOUNDS
MATERIALS
MINERALS
MOLECULAR BEAM EPITAXY
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PEROVSKITE
PEROVSKITES
PHOTORESISTORS
PULSED IRRADIATION
RADIATIONS
REACTIVITY
RESISTORS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SENSITIVITY
SILICON
SILICON COMPOUNDS
SILICON OXIDES
STRAINS
STRONTIUM COMPOUNDS
STRONTIUM TITANATES
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS