Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870939· OSTI ID:22273605

Dey, Anup ^[1]; Maiti, Biswajit ^[2]; Chanda, Debasree ^[3]

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1. Electronics and Communication Engineering Department, Kalyani Government Engineering College, Kalyani 741235 (India)
2. Physics Department, Kalyani Government Engineering College, Kalyani 741235 (India)
3. Department of Engineering and Technological Studies, Kalyani University, Kalyani 741235 (India)

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

• OSTI ID: 22273605
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
ABSORPTION SPECTROSCOPY
CADMIUM TELLURIDES
COMPARATIVE EVALUATIONS
ELECTRONIC STRUCTURE
ENERGY GAP
GAIN
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MATRIX ELEMENTS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
VALENCE
X-RAY SPECTROSCOPY