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Title: Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

Abstract

The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

Authors:
; ;  [1]
  1. Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)
Publication Date:
OSTI Identifier:
22273551
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CORRELATIONS; DOPED MATERIALS; HYDROGEN; INDIUM OXIDES; MICROSTRUCTURE; MORPHOLOGY; RADIOWAVE RADIATION; REFLECTIVITY; ROUGHNESS; SPUTTERING; THIN FILMS; TIN COMPOUNDS; X-RAY DIFFRACTION

Citation Formats

Nie, Man, E-mail: man.nie@helmholtz-berlin.de, Mete, Tayfun, and Ellmer, Klaus. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere. United States: N. p., 2014. Web. doi:10.1063/1.4871810.
Nie, Man, E-mail: man.nie@helmholtz-berlin.de, Mete, Tayfun, & Ellmer, Klaus. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere. United States. doi:10.1063/1.4871810.
Nie, Man, E-mail: man.nie@helmholtz-berlin.de, Mete, Tayfun, and Ellmer, Klaus. 2014. "Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere". United States. doi:10.1063/1.4871810.
@article{osti_22273551,
title = {Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere},
author = {Nie, Man, E-mail: man.nie@helmholtz-berlin.de and Mete, Tayfun and Ellmer, Klaus},
abstractNote = {The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.},
doi = {10.1063/1.4871810},
journal = {Journal of Applied Physics},
number = 15,
volume = 115,
place = {United States},
year = 2014,
month = 4
}
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