Effect of interfacial layer on the crystal structure of InAs/AlAs{sub 0.16}Sb{sub 0.84}/AlSb quantum wells

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4872138· OSTI ID:22273542

Chen, C. H. ^[1]; Lee, C. P. ^[2]

---

1. Center for Nano Science and Technology, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)
2. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

Ion channeling technique using MeV C{sup 2+} ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface.

• OSTI ID: 22273542
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
CARBON IONS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRON MOBILITY
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
ION CHANNELING
LAYERS
MEV RANGE
MORPHOLOGY
QUANTUM WELLS
RELAXATION
RESOLUTION
STRAINS
SURFACES
X-RAY DIFFRACTION