Enhanced electrochemical etching of ion irradiated silicon by localized amorphization
- Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore)
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)
- Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)
A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.
- OSTI ID:
- 22273391
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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