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Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4858393· OSTI ID:22271288
; ; ; ; ; ;  [1]; ;  [2]
  1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz. 1, 14109 Berlin (Germany)
  2. Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.

OSTI ID:
22271288
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English