Deep traps in n-type GaN epilayers grown by plasma assisted molecular beam epitaxy

Journal Article · Tue Jan 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861180· OSTI ID:22271260

Kamyczek, P.; Placzek-Popko, E.; Zielony, E.; Gumienny, Z. ^[1]; Zytkiewicz, Z. R. ^[2]

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1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

In this study, we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77 K–350 K. Undoped GaN layers were grown using the plasma-assisted molecular beam epitaxy technique on commercial GaN/sapphire templates. The quality of the epilayers was studied by micro-Raman spectroscopy (μ-RS) which proved the hexagonal phase and good crystallinity of GaN epilayers as well as a slight strain. The photoluminescence spectrum confirmed a high crystal quality by intense excitonic emission but it also exhibited a blue emission band of low intensity. DLTS signal spectra revealed the presence of four majority traps: two high-temperature and two low-temperature peaks. Using the Laplace DLTS method and Arrhenius plots, the apparent activation energy and capture cross sections were obtained. For two high-temperature majority traps, they were equal to E{sub 1} = 0.65 eV, σ{sub 1} = 8.2 × 10{sup −16} cm{sup 2} and E{sub 2} = 0.58 eV, σ{sub 2} = 2.6 × 10{sup −15} cm{sup 2} whereas for the two low-temperature majority traps they were equal to E{sub 3} = 0.18 eV, σ{sub 3} = 9.7 × 10{sup −18} cm{sup 2} and E{sub 4} = 0.13 eV, σ{sub 4} = 9.2 × 10{sup −18} cm{sup 2}. The possible origin of the traps is discussed and the results are compared with data reported elsewhere.

• OSTI ID: 22271260
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
COMPARATIVE EVALUATIONS
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
EMISSION SPECTRA
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PLASMA
RAMAN SPECTROSCOPY
SAPPHIRE
STRAINS
TEMPERATURE DEPENDENCE
TRAPS