Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiN{sub x} nanonetwork

Journal Article · Mon Jun 25 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2753096· OSTI ID:20971987

Jinqiao, Xie; Chevtchenko, Serguei A; Oezguer, Uemit; Morkoc, Hadis ^[1]

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1. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States) and Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

Line and point defect reductions in thin GaN epilayers with single and double in situ SiN{sub x} nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy (DLTS), augmented by x-ray diffraction (XRD), and low temperature photoluminescence (PL). All samples measured by DLTS in the temperature range from 80 to 400 K exhibited trap A (peak at {approx}325 K) with an activation energy of 0.55-0.58 eV, and trap B (peak at {approx}155 K) with an activation energy of 0.21-0.28 eV. The concentrations of both traps were much lower for layers with SiN{sub x} nanonetwork compared to the reference sample. The lowest concentration was achieved for the sample with 6 min deposition SiN{sub x} nanonetwork, which was also lower than that for a sample prepared by conventional epitaxial lateral overgrowth. In concert with the DLTS results, PL and XRD linewidths were reduced for the samples with SiN{sub x} network indicating improved material quality. Consistent trend among optical, structural, and DLTS results suggests that SiN{sub x} network can effectively reduce both point and line defects.

• OSTI ID: 20971987
• Journal Information: Applied Physics Letters, Vol. 90, Issue 26; Other Information: DOI: 10.1063/1.2753096; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CHEMICAL VAPOR DEPOSITION
DEEP LEVEL TRANSIENT SPECTROSCOPY
EPITAXY
LINE DEFECTS
LINE WIDTHS
METALS
PEAKS
PHOTOLUMINESCENCE
POINT DEFECTS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
X-RAY DIFFRACTION