Investigation on the electrical transport properties of highly (00l)-textured Sb{sub 2}Te{sub 3} films deposited by molecular beam epitaxy

Journal Article · Tue Jan 14 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4861394· OSTI ID:22271246

Zhang, Xiangpeng; Zeng, Zhigang; Shen, Chao; Wang, Zhichong; Lin, Cong ^[1]; Zhang, Ziqiang ^[2]; Hu, Zhiyu ^[1]

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1. Department of Physics, Shanghai University, Shanghai 200444 (China)
2. Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444 (China)

Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm{sup 2}/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ∼ 4 μΩ⋅cm/K.

• OSTI ID: 22271246
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY TELLURIDES
CARRIER MOBILITY
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
GRAIN BOUNDARIES
GRAIN SIZE
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
TEMPERATURE COEFFICIENT
TEMPERATURE RANGE 0273-0400 K
TEXTURE
THIN FILMS
X-RAY DIFFRACTION