Tuning of opto-electronic properties of Cu{sub 2}SnS{sub 3} thin films through variation of stoichiometry

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4873100· OSTI ID:22269406

Sunny, Gincy

Copper Tin Sulfide (Cu{sub 2}SnS{sub 3}), one of the promising absorber layer for thin film solar cell, was successfully deposited on glass substrate maintained at a substrate temperature of 325° C by chemical spray pyrolysis technique (CSP). Variation in copper concentration in the precursor solution affects the structural, optical and electrical properties of the films. XRD results proved the tetragonal structure (with preferential orientation along (112) orientation) of the samples. All samples were p-type and their band gap and resistivity decreased with increase in Copper concentration. A minimum resistivity of 1.6×10{sup −3} Ω.cm was obtained for an optimum copper concentration.

• OSTI ID: 22269406
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER
DEPOSITS
ELECTRICAL PROPERTIES
GLASS
LAYERS
PYROLYSIS
SOLAR CELLS
SUBSTRATES
THIN FILMS
TIN SULFIDES
X-RAY DIFFRACTION