Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP

Journal Article · Mon Apr 15 00:00:00 EDT 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-019-1812-1· OSTI ID:22950332

Kulandaisamy, I.; Arulanantham, A. M. S.; Valanarasu, S. ^[1]; Kathalingam, A. ^[2]; Jesu Jebathew, A. ^[3]; Shkir, Mohd ^[4]; Karunakaran, M. ^[3]

---

1. Arul Anandar College, PG & Research Department of Physics (India)
2. Millimeter Wave Innovation Technology Research Center (MINT), Dongguk University (Korea, Republic of)
3. Alagappa Govt Arts College, PG & Research Department of Physics (India)
4. King Khalid University, Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science (Saudi Arabia)

Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B{sub 1g}, B{sub 2g}, and B{sub 3g} vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72 eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722 nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695×10{sup −1} Ω cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.

• OSTI ID: 22950332
• Journal Information: Optical and Quantum Electronics, Vol. 51, Issue 4; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
CONCENTRATION RATIO
DOPED MATERIALS
NANOFILMS
ORTHORHOMBIC LATTICES
OSCILLATION MODES
PYROLYSIS
RAMAN SPECTROSCOPY
SHRINKAGE
SOLAR CELLS
SPRAYS
TEMPERATURE RANGE 0273-0400 K
TIN SULFIDES
X-RAY DIFFRACTION