skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4872842· OSTI ID:22269218
;  [1]
  1. Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700064 (India)

The anisotropic regular patterns are often results during oblique incidence ion beam sputtering (IBS). Simultaneous substrate rotation (SR) during IBS can suppress surface roughening and removes anisotropic nature of surface pattern. Here, the evolution of Si surface morphology as result of with and without SR is studied during oblique incidence low energy Ar{sup +} sputtering. Resultant topography shows smooth surface to hexagonally ordered nanodots at different rotating conditions. Interestingly, surface roughness exhibits non-monotonic dependence on rotation frequency. The underlying mechanism for dot formation can be described within the framework of isotropic DKS equation.

OSTI ID:
22269218
Journal Information:
AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English

Similar Records

Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001)
Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics · OSTI ID:22269218

Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions
Journal Article · Mon Oct 04 00:00:00 EDT 2010 · AIP Conference Proceedings · OSTI ID:22269218

Influence of oxygen on the formation of ripples on Si
Journal Article · Mon Nov 01 00:00:00 EST 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) · OSTI ID:22269218