Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions
- Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)
- Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India)
Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.
- OSTI ID:
- 21454841
- Journal Information:
- AIP Conference Proceedings, Vol. 1276, Issue 1; Conference: ICANN-2009: International conference on advanced nanomaterials and nanotechnology, Guwahati, Assam (India), 9-11 Dec 2009; Other Information: DOI: 10.1063/1.3504341; (c) 2010 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
DENSITY
GALLIUM ARSENIDES
ION BEAMS
IRRADIATION
KEV RANGE
PHYSICAL RADIATION EFFECTS
QUANTUM DOTS
SPUTTERING
SUBSTRATES
SURFACES
TOPOGRAPHY
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
ENERGY RANGE
GALLIUM COMPOUNDS
IONS
MICROSCOPY
NANOSTRUCTURES
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SCATTERING