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Title: Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3504341· OSTI ID:21454841
; ; ; ; ;  [1]; ; ;  [2]
  1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)
  2. Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India)

Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

OSTI ID:
21454841
Journal Information:
AIP Conference Proceedings, Vol. 1276, Issue 1; Conference: ICANN-2009: International conference on advanced nanomaterials and nanotechnology, Guwahati, Assam (India), 9-11 Dec 2009; Other Information: DOI: 10.1063/1.3504341; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English