Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices

Journal Article · Sat Dec 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4857035· OSTI ID:22267782

Simon, R. A.; Kamimura, H.; Chiquito, A. J. ^[1]; Berengue, O. M. ^[2]; Leite, E. R. ^[3]

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1. NanO LaB - Departamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676 São Carlos, São Paulo (Brazil)
2. Departamento de Física e Química, Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Paulista Júlio de Mesquita Filho, CEP 12516-410 Guaratingueta, São Paulo (Brazil)
3. Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 135665-905, CP 676 São Carlos, São Paulo (Brazil)

It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2 nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states.

• OSTI ID: 22267782
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION BARRIERS
EQUIPMENT
FERMI LEVEL
FIELD EFFECT TRANSISTORS
GERMANIUM
OXIDES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
VENTILATION BARRIERS
WIRES
WORK FUNCTIONS