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Gallium antimonide surface states and Schottky-barrier pinning

Journal Article · · Phys. Rev. Lett.; (United States)
; ; ;
Photoemission measurements on GaSb indicate no surface states in the band gap. Deposition of Cs to form a Schottky barrier on n-GaSb moves the Fermi level 0.55 eV and produces pinning within the band gap. Thus, for the first time, Schottky-barrier pinning without the presence of intrinsic surface states in the gap is directly demonstrated. (WDM)
Research Organization:
Stanford Univ., CA
OSTI ID:
7364750
Journal Information:
Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 35:23; ISSN PRLTA
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360304 -- Composite Materials-- Physical Properties-- (-1987)
ALKALI METALS
ANTIMONY COMPOUNDS
CESIUM
ELEMENTS
EMISSION
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
METALS
PHOTOEMISSION
SCHOTTKY BARRIER DIODES
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACES