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Effect of annealing temperature on optical and electrical properties of ZrO{sub 2}−SnO{sub 2} based nanocomposite thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4862014· OSTI ID:22264010
Transparent nanocomposite ZrO{sub 2}−SnO{sub 2} thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO{sub 2} and SnO{sub 2} and orthorhombic ZrSnO{sub 4}. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO{sub 2}−SnO{sub 2} films can be used in many applications and in optoelectronic devices.
OSTI ID:
22264010
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1576; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English