Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices
Journal Article
·
· AIP Conference Proceedings
- Ioffe Physical Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya ul., St. Petersburg 194021 (Russian Federation)
Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.
- OSTI ID:
- 22263696
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1583; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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