Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

Journal Article · Mon Apr 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4873540· OSTI ID:22262772

Yermolaev, D. M.; Shapoval, S. Yu. ^[1]; Maremyanin, K. V.; Gavrilenko, V. I. ^[2]; Zemlyakov, V. E.; Bespalov, V. A.; Yegorkin, V. I. ^[3]; Maleev, N. A.; Ustinov, V. M. ^[4]

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1. Institute of Microelectronic Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow Region 142432 (Russian Federation)
2. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation)
3. National Research University of Electronic Technology, Zelenograd, Moscow 124498 (Russian Federation)
4. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10{sup −11} W/Hz{sup 0.5} in the unbiased mode of the detector operation.

• OSTI ID: 22262772
• Journal Information: Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTOVOLTAIC EFFECT
RADIATION DETECTION