Fast luminescence decay of electron-hole quasi-two dimensional systems in Si nanolayer

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848477· OSTI ID:22261894

Sakurai, Y.; Ohmori, K.; Yamada, K.; Shiraishi, K.; Nomura, S. ^[1]; Tayagaki, T.; Kanemitsu, Y. ^[2]

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1. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan)
2. Institute for chemical research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011 (Japan)

We have studied the photoluminescence (PL) spectra and PL decay profiles of electron-hole systems in high quality Si nanolayers. We have found that the PL lifetime decreases with decrease in the thickness of silicon nanolayers between 25.2 and 2.7 nm and with decrease in temperature between 5 and 70 K.

• OSTI ID: 22261894
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DECAY
PHOTOLUMINESCENCE
SILICON
SPECTRA
THICKNESS
TWO-DIMENSIONAL CALCULATIONS