Concentration of Er{sup 3+} ions contributing to 1.5-{mu}m emission in Si/Si:Er nanolayers
- Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam (Netherlands)
- Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Gent (Belgium)
We have investigated the percentage of Er{sup 3+} ions which contribute to the low temperature 1.5-{mu}m photoluminescence in Si/Si:Er nanolayer structures grown by sublimation molecular beam epitaxy. In a structure optimized for preferential formation of the Er-1 center with ultranarrow emission lines, we find that emission saturates when approximately 2% of all the Er dopants recombine radiatively upon optical excitation. In a structure where the silicon spacer thickness has been optimized for the maximum (broadband) emission intensity relative to Er contents, we show that in saturation approximately 15% of Er dopants contribute photons. At the same time, from the initial growth of emission intensity on excitation flux at low power, we estimate the maximum percentage of Er ions attaining optical activity. These limits of optical activity of Er in Si/Si:Er nanolayer structures are determined as 25% and 48% for Er-1 and total emission, respectively. In the context of this high level of optical activity, potential of Si/Si:Er nanolayer structures for realization of optical amplification at low temperatures is pointed out.
- OSTI ID:
- 21055140
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 76, Issue 8; Other Information: DOI: 10.1103/PhysRevB.76.085339; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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