Shot noise at the quantum point contact in InGaAs heterostructure

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848410· OSTI ID:22261833

Nishihara, Yoshitaka; Nakamura, Shuji; Ono, Teruo ^[1]; Kobayashi, Kensuke ^[2]; Kohda, Makoto ^[3]; Nitta, Junsaku ^[4]

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1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
2. Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)
3. Department of Materials Science, Tohoku University, 6-6-02 Aramaki-aza Aoba, Aoba-ku, Sendai 980-8579, Japan and PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
4. Department of Materials Science, Tohoku University, 6-6-02 Aramaki-aza Aoba, Aoba-ku, Sendai 980-8579 (Japan)

We study the shot noise at a quantum point contact (QPC) fabricated in an InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. Shot noise suppression is observed at the conductance plateau of N(2e{sup 2}/h) (N = 4,5,and 6), which indicates the coherent quantized channel formation in the QPC. The electron heating effect generated at the QPC explains the deviation of the observed Fano factor from the theory.

• OSTI ID: 22261833
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
FANO FACTOR
GALLIUM ARSENIDES
INDIUM ARSENIDES