Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871255· OSTI ID:22261551

Yang, Chan-Shan ^[1]; Tang, Tsung-Ta ^[2]; Pan, Ru-Pin ^[3]; Yu, Peichen ^[4]; Pan, Ci-Ling ^[1]

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1. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
2. Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (China)
3. Department of Electrophysics, National Chiao Tung University, Hsinchu 30078, Taiwan (China)
4. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

• OSTI ID: 22261551
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALIGNMENT
CURIUM OXIDES
ELECTRON BEAMS
INDIUM
LIQUID CRYSTALS
NANOSTRUCTURES
PHASE SHIFT
SEMICONDUCTOR MATERIALS
THIN FILMS
TIN OXIDES
TRANSISTORS