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Title: Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift

Abstract

Superlattices of Si{sub 3}N{sub 4} and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiN{sub x} layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si{sub 3}N{sub 4} matrix remains amorphous even after annealing at 1200 °C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO{sub 2} matrix. Also, a systematic peak shift was not found. The SiN{sub x}/Si{sub 3}N{sub 4} superlattices showed photoluminescence peak positions in the range of 540–660 nm (2.3–1.9 eV), thus quite similar to the bulk Si{sub 3}N{sub 4} film having peak position at 577 nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si{sub 3}N{sub 4} are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barriermore » thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si{sub 3}N{sub 4} surrounding matrix luminescence.« less

Authors:
; ;  [1];  [2]; ;  [3];  [4];  [5]; ; ; ;  [6];  [6];
  1. Faculty of Engineering, IMTEK, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany)
  2. Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2 (Ireland)
  3. Institute for Applied Materials (IAM) and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)
  4. MATIS IMM-CNR, Universita' di Catania, Via S. Sofia 64, I-95123 Catania (Italy)
  5. Fraunhofer-Institut für Solare Energiesysteme ISE Heidenhofstr. 2, 79110 Freiburg (Germany)
  6. MIND-IN2UB, Departament d’Electrònica, Universitat de Barcelona, C/Martí i Franquès, 1, 08028 Barcelona (Spain)
Publication Date:
OSTI Identifier:
22259294
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION BARRIERS; LAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; QUANTUM DOTS; RED SHIFT; SILICA; SILICON; SILICON NITRIDES; SILICON OXIDES; SUPERLATTICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VENTILATION BARRIERS; X-RAY DIFFRACTION

Citation Formats

Zelenina, A., E-mail: anastasia.zelenina@imtek.uni-freiburg.de, Hiller, D., Gutsch, S., Zacharias, M., Dyakov, S. A., Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology, Trouillet, V., Bruns, M., Mirabella, S., Löper, P., López-Conesa, L., López-Vidrier, J., Peiró, F., Garrido, B., Estradé, S., CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Lluís Solé i Sabaris 1, 08028 Barcelona, and others, and. Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift. United States: N. p., 2013. Web. doi:10.1063/1.4830026.
Zelenina, A., E-mail: anastasia.zelenina@imtek.uni-freiburg.de, Hiller, D., Gutsch, S., Zacharias, M., Dyakov, S. A., Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology, Trouillet, V., Bruns, M., Mirabella, S., Löper, P., López-Conesa, L., López-Vidrier, J., Peiró, F., Garrido, B., Estradé, S., CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Lluís Solé i Sabaris 1, 08028 Barcelona, & others, and. Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift. United States. https://doi.org/10.1063/1.4830026
Zelenina, A., E-mail: anastasia.zelenina@imtek.uni-freiburg.de, Hiller, D., Gutsch, S., Zacharias, M., Dyakov, S. A., Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology, Trouillet, V., Bruns, M., Mirabella, S., Löper, P., López-Conesa, L., López-Vidrier, J., Peiró, F., Garrido, B., Estradé, S., CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Lluís Solé i Sabaris 1, 08028 Barcelona, and others, and. Thu . "Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift". United States. https://doi.org/10.1063/1.4830026.
@article{osti_22259294,
title = {Structural and optical properties of size controlled Si nanocrystals in Si{sub 3}N{sub 4} matrix: The nature of photoluminescence peak shift},
author = {Zelenina, A., E-mail: anastasia.zelenina@imtek.uni-freiburg.de and Hiller, D. and Gutsch, S. and Zacharias, M. and Dyakov, S. A. and Optics and Photonics, School of Information and Communication Technology, Royal Institute of Technology and Trouillet, V. and Bruns, M. and Mirabella, S. and Löper, P. and López-Conesa, L. and López-Vidrier, J. and Peiró, F. and Garrido, B. and Estradé, S. and CCiT, Scientific and Technical Centers, Universitat de Barcelona, C/Lluís Solé i Sabaris 1, 08028 Barcelona and others, and},
abstractNote = {Superlattices of Si{sub 3}N{sub 4} and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiN{sub x} layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si{sub 3}N{sub 4} matrix remains amorphous even after annealing at 1200 °C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO{sub 2} matrix. Also, a systematic peak shift was not found. The SiN{sub x}/Si{sub 3}N{sub 4} superlattices showed photoluminescence peak positions in the range of 540–660 nm (2.3–1.9 eV), thus quite similar to the bulk Si{sub 3}N{sub 4} film having peak position at 577 nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si{sub 3}N{sub 4} are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si{sub 3}N{sub 4} surrounding matrix luminescence.},
doi = {10.1063/1.4830026},
url = {https://www.osti.gov/biblio/22259294}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 18,
volume = 114,
place = {United States},
year = {2013},
month = {11}
}