Structural evolution and photoluminescence of annealed Si-rich nitride with Si quantum dots prepared by plasma enhanced chemical vapor deposition

Journal Article · Mon Apr 21 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4872321· OSTI ID:22273550

Zeng, Xiangbin; Liao, Wugang; Wen, Guozhi; Wen, Xixing; Zheng, Wenjun ^[1]

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1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

Silicon-rich nitride films were deposited by plasma enhanced chemical vapor deposition. Silicon quantum dots (Si QDs) were formed by post-thermal annealing processing verified using the High-Resolution Transmission Electron Microscope. The 1100 °C thermal annealing leads to the nucleation of silicon atoms, the growth of Si QDs, and the rearrangement of Si 2p and N 1s elements. The structural evolution of silicon-rich nitride thin film with post annealing promotes the formation of Si QDs and Si{sub 3}N{sub 4} matrix. We also investigated the effect of the NH{sub 3}-to-SiH{sub 4} ratio R on the photoluminescence (PL) of SiN{sub x} with Si QDs. We found that the broad blue luminescence originates from both quantum confined effect and radiative defects. The intensity of the PL was changed by adjusting the NH{sub 3} flow rate. The increase of R could limit the transformation of Si QDs from amorphous to crystalline status, meanwhile lead to the alteration of distribution of defect states. These can help to understand the annealing-dependent characteristics, the PL mechanisms of silicon-rich nitride and to optimize the fabrication process of Si QDs embedded in nitride.

• OSTI ID: 22273550
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 15 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
AMMONIA
ANNEALING
CHEMICAL VAPOR DEPOSITION
EMISSION SPECTRA
MATRIX MATERIALS
NUCLEATION
PHOTOLUMINESCENCE
QUANTUM DOTS
SILANES
SILICON
SILICON NITRIDES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY