Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

Journal Article · Mon Mar 24 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869489· OSTI ID:22258618

Mikhelashvili, V.; Eisenstein, G. ^[1]; Kuchar, K. J. ^[1]; Capua, A. ^[1]; Sęk, G.; Misiewicz, J. ^[2]; Ivanov, V.; Reithmaier, J. P. ^[3]

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1. Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel)
2. Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland)
3. Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

• OSTI ID: 22258618
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMPLIFIERS
GAIN
INDIUM ARSENIDES
INDIUM PHOSPHIDES
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
WAVELENGTHS