An efficient atomistic quantum mechanical simulation on InAs band-to-band tunneling field-effect transistors

Journal Article · Mon Mar 24 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869461· OSTI ID:22258611

Wang, Zhi ^[1]; Jiang, Xiang-Wei; Li, Shu-Shen ^[1]; Wang, Lin-Wang ^[2]

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1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
2. Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We have presented a fully atomistic quantum mechanical simulation method on band-to-band tunneling (BTBT) field-effect transistors (FETs). Our simulation approach is based on the linear combination of bulk band method with empirical pseudopotentials, which is an atomist method beyond the effective-mass approximation or k.p perturbation method, and can be used to simulate real-size devices (∼10{sup 5} atoms) efficiently (∼5 h on a few computational cores). Using this approach, we studied the InAs dual-gate BTBT FETs. The I-V characteristics from our approach agree very well with the tight-binding non-equilibrium Green's function results, yet our method costs much less computationally. In addition, we have studied ways to increase the tunneling current and analyzed the effects of different mechanisms for that purpose.

• OSTI ID: 22258611
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
FIELD EFFECT TRANSISTORS
GREEN FUNCTION
INDIUM ARSENIDES
PERTURBATION THEORY
QUANTUM MECHANICS
TUNNEL EFFECT