Atomic configuration of irradiation-induced planar defects in 3C-SiC

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869829· OSTI ID:22258596

Lin, Y. R. ^[1]; Ho, C. Y. ^[2]; Hsieh, C. Y.; Chang, M. T.; Lo, S. C. ^[3]; Chen, F. R. ^[1]

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1. Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
2. Institute of Nuclear Engineering and Science, National Tsing-Hua University, Hsinchu 30013, Taiwan (China)
3. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)

The atomic configuration of irradiation-induced planar defects in single crystal 3C-SiC at high irradiation temperatures was shown in this research. A spherical aberration corrected scanning transmission electron microscope provided images of individual silicon and carbon atoms by the annular bright-field (ABF) method. Two types of irradiation-induced planar defects were observed in the ABF images including the extrinsic stacking fault loop with two offset Si-C bilayers and the intrinsic stacking fault loop with one offset Si-C bilayer. The results are in good agreement with images simulated under identical conditions.

• OSTI ID: 22258596
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
IRRADIATION
MONOCRYSTALS
SILICON CARBIDES
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY