Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

Journal Article · Mon Dec 31 23:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4813593· OSTI ID:1095736

Ishimaru, Dr. Manabu ^[1]; Zhang, Yanwen ^[2]; Shannon, Prof. Steven ^[3]; Weber, William J ^[2]

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1. Osaka University
2. ORNL
3. North Carolina State University

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to examine structural changes induced by electron beam irradiation in 3C-SiC containing nanolayers of (111) planar defects. We found that preferential amorphization, when it does occur, takes place at grain boundaries and at 111 and 111 planar defects. Radiationinduced point defects, such as interstitials and vacancies, migrate two-dimensionally between the (111) planar defects, which probably enhances the damage recovery.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: ME USDOE - Office of Management, Budget, and Evaluation; ORNL work for others
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1095736
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 103; ISSN 0003-6951
• Country of Publication: United States
• Language: English