Evaluating the size-dependent quantum efficiency loss in a SiO{sub 2}-Y{sub 2}O{sub 3} hybrid gated type-II InAs/GaSb long-infrared photodetector array

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868486· OSTI ID:22257208

Chen, G.; Hoang, A. M.

Growing Y{sub 2}O{sub 3} on 20 nm SiO{sub 2} to passivate a 11 μm 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (V{sub G,sat}) to −7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400 μm to 57 μm size gated photodiode. Evolution of QE of the 57 μm gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77 K and V{sub G,sat}, the 57 μm gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 × 10{sup −5} A/cm{sup 2} dark current density at −200 mV, and a specific detectivity of 2.3 × 10{sup 12} Jones.

• OSTI ID: 22257208
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
QUANTUM EFFICIENCY
RADIATION DETECTORS
SILICA
SILICON OXIDES
SUPERLATTICES
YTTRIUM OXIDES