Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

Journal Article · Mon Mar 10 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868648· OSTI ID:22257039

Grinblat, Gustavo; Comedi, David ^[1]; Bern, Francis; Barzola-Quiquia, José; Esquinazi, Pablo ^[2]; Tirado, Mónica ^[3]

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1. Laboratorio de Física del Sólido, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán, and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina)
2. Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, D-04103 Leipzig (Germany)
3. Laboratorio de Nanomateriales y Propiedades Dieléctricas, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán (Argentina)

To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1 V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.

• OSTI ID: 22257039
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC CONDUCTIVITY
ELECTRONS
LUMINESCENCE
MAGNESIUM OXIDES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
ULTRAVIOLET RADIATION
ZINC OXIDES