Ion sources for ion implantation technology (invited)

Journal Article · Sat Feb 15 00:00:00 EST 2014 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4852315· OSTI ID:22253593

Sakai, Shigeki; Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki ^[1]

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1. Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205 (Japan)

Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

• OSTI ID: 22253593
• Journal Information: Review of Scientific Instruments, Vol. 85, Issue 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ALUMINIUM IONS
BEAM CURRENTS
CARBIDES
CONNECTORS
CURIUM OXIDES
ELECTRIC CONTACTS
FABRICATION
ION IMPLANTATION
ION PAIRS
ION SOURCES
METALS
SENSORS