Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
- Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
- Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)
This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E{sub −} conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E{sub +} and the E{sub −} conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.
- OSTI ID:
- 22253207
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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