Plasma-enhanced chemical vapor deposition of graphene on copper substrates
- Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany)
- Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany)
- Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.
- OSTI ID:
- 22253082
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 4 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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